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Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure

Jang, Young In, Lee, Sang Hyuk, Seo, Jae Hwa, Yoon, Young Jun, Kwon, Ra Hee, Cho, Min Su, Kim, Bo Gyeong, Yoo, Gwan Min, Lee, Jung-Hee, Kang, In Man

[Kisti 연계] 대한전자공학회 Journal of semiconductor technology and science Vol.17 No.2 2017 pp.223-229

InGaAs-based Tunneling Field-effect Transistor with Stacked Dual-metal Gate with PNPN Structure for High Performance

Kwon, Ra Hee, Lee, Sang Hyuk, Yoon, Young Jun, Seo, Jae Hwa, Jang, Young In, Cho, Min Su, Kim, Bo Gyeong, Lee, Jung-Hee, Kang, In Man

[Kisti 연계] 대한전자공학회 Journal of semiconductor technology and science Vol.17 No.2 2017 pp.230-238

Electrical Characteristics of Tunneling Field-effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs

Kim, Bo Gyeong, Kwon, Ra Hee, Seo, Jae Hwa, Yoon, Young Jun, Jang, Young In, Cho, Min Su, Lee, Jung-Hee, Cho, Seongjae, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.12 No.6 2017 pp.2324-2332

Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications

Yoon, Young Jun, Seo, Jae Hwa, Cho, Seongjae, Kwon, Hyuck-In, Lee, Jung-Hee, Kang, In Man

[Kisti 연계] 대한전자공학회 Journal of semiconductor technology and science Vol.16 No.2 2016 pp.172-178

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Kang, Hye Su, Seo, Jae Hwa, Yoon, Young Jun, Cho, Min Su, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.11 No.6 2016 pp.1763-1768

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Kim, Sung Yoon, Seo, Jae Hwa, Yoon, Young Jun, Kim, Jin Su, Cho, Seongjae, Lee, Jung-Hee, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.10 No.3 2015 pp.1131-1137

Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

Jang, Young In, Seo, Jae Hwa, Yoon, Young Jun, Eun, Hye Rim, Kwon, Ra Hee, Lee, Jung-Hee, Kwon, Hyuck-In, Kang, In Man

[Kisti 연계] 대한전자공학회 Journal of semiconductor technology and science Vol.15 No.5 2015 pp.554-562

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

Eun, Hye Rim, Woo, Sung Yun, Lee, Hwan Gi, Yoon, Young Jun, Seo, Jae Hwa, Lee, Jung-Hee, Kim, Jungjoon, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.9 No.5 2014 pp.1654-1659

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Kim, Sung Yoon, Seo, Jae Hwa, Yoon, Young Jun, Yoo, Gwan Min, Kim, Young Jae, Eun, Hye Rim, Kang, Hye Su, Kim, Jungjoon, Cho, Seongjae, Lee, Jung-Hee, Kang, In Man

[Kisti 연계] 대한전자공학회 Journal of semiconductor technology and science Vol.14 No.5 2014 pp.508-517

Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

Roh, Hee Bum, Seo, Jae Hwa, Yoon, Young Jun, Bae, Jin-Hyuk, Cho, Eou-Sik, Lee, Jung-Hee, Cho, Seongjae, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.9 No.6 2014 pp.2070-2078

Design Optimization of Silicon-based Junctionless Fin-type Field-Effect Transistors for Low Standby Power Technology

Seo, Jae Hwa, Yuan, Heng, Kang, In Man

[Kisti 연계] 대한전기학회 Journal of electrical engineering & technology Vol.8 No.6 2013 pp.1497-1502