원문정보
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초록
영어
Atomic layer deposition (ALD) process optimization of Al2O3-doped ZnO (AZO) interlayer (IL) inserted between channel and electrodes was held to improve electrical contact properties of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs). In particular, the modulation of the ALD supercycle duty and variations in Al₂O₃ injection cycles were investigated and optimized for their effects on contact properties during the deposition of the AZO IL. The use of alloy-AZO2 IL effectively improves overall device performance.
목차
Abstract
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
저자정보
참고문헌
자료제공 : 네이버학술정보