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논문검색

High Performance IGZO/PbS QD/Ga2O3 based Near-IR Photo Sensor

원문정보

Yong Jun Jeong, Jae Kyeong Jeong

한국정보통신설비학회 한국정보통신설비학회 학술대회 한국정보통신설비학회 2025 하계학술대회 2025.08 pp.255-256
피인용수 : 0건 (자료제공 : 네이버학술정보)

초록

영어

In this study, we significantly enhanced the optical performance and stability of IGZO/PbS QD phototransistors by introducing Ga2O3 passivation layer. The resulting IGZO/PbS QD/Ga₂O₃ demonstrated a responsivity of 196.69 A/W and a detectivity of 5.47 × 10¹² Jones under 1550 nm illumination.

목차

Abstract
1. Introduction
2. Experimental Procedure
3. Result and Discussion
4. Conclusion
References

저자정보

  • Yong Jun Jeong Department of Electronic Engineering, Hanyang University
  • Jae Kyeong Jeong Department of Electronic Engineering, Hanyang University

참고문헌

자료제공 : 네이버학술정보

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