원문정보
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초록
영어
A Gate-All-Around (GAA) structure for 3D DRAM was fabricated using an ALD-based oxide semiconductor channel to enable low-temperature processing and suppress leakage current. Spacer engineering with ALD and dry-oxidized SiO2 effectively reduced leakage paths compared to PECVD. The use of Al2O3 as the gate insulator further improved insulation. The device demonstrated promising performance with Ion = 1.30 μA and SS = 113 mV/decade at VDS = 1.1 V, indicating its potential for next-generation memory applications.
목차
Abstract
I. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
I. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
저자정보
참고문헌
자료제공 : 네이버학술정보