earticle

영어

Iron chalcogenides exhibit a variety of emerging properties via substituting the chalcogenide atoms between Te, Se and S. The interplay between temperature, pressure, and composition in iron chalcogenides drives transitions between various phases, e.g., superconducting, magnetic, and structural phases. These phase behaviors are known to result from tuning the bond angle between Fe and chalcogenide atoms in such Fe-Ch compounds. By growing FeTe thin films on substrates via molecular beam epitaxy (MBE), we tune the epitaxial strain imposed on FeTe, and thus manipulate the Fe-Te bond angle. Our transport and angle-resolved photoemission spectroscopy (ARPES) measurements show that such modulation in the FeTe structure effectively modifies the underlying electronic structure, giving rise to various emerging properties different from those of bulk FeTe. We further propose to systematically investigate FeTe thin films to reveal novel phases inaccessible in bulk iron chalcogenides and study the origin of such emergent behaviors.