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Poster Session IV

Rotating-Gate Field-Effect Transistor Using A Triboelectric Motor

원문정보

Hyunji Shin, Xue Zhang, Dae Yu Kim

한국차세대컴퓨팅학회 한국차세대컴퓨팅학회 학술대회 The 7th International Conference on Next Generation Computing 2021 2021.11 pp.359-360
피인용수 : 0건 (자료제공 : 네이버학술정보)

초록

영어

In this paper, a rotating-gate field-effect transistor has been developed to be used as a self-powered sensor. The developed device showed the drain current increased according to the rotation velocity of the gate motor and saturated under a sufficient drain voltage.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENTAL DETAILS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
ACKNOWLEDGMENT
REFERENCES

키워드

저자정보

  • Hyunji Shin R&E Center for ICT-Future Vehicle Convergence Engineering Inha University
  • Xue Zhang Ocean Science and Engineering Shandong University of Science and Technology Qingdao, China
  • Dae Yu Kim Electrical Engineering Inha University

참고문헌

자료제공 : 네이버학술정보

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