원문정보
초록
영어
This study aimed to a sign device using quantum dot film. We synthesized quantum dots with an absolute quantum yield of more than 95% using the solution process method, coated the quantum dot film by mixing it with acrylate resin, made a sign device, and studied the improvement of visibility, and obtained the following conclusions. Quantum dots with absolute quantum yield of 97.63% at 535 nm and 97.85% at 615 nm were synthesized by doping InP with GaP and stacking ZnSe and ZnS composite shells. The synthesized quantum dots were mixed with acrylate syrup at a weight ratio of 10% to coat a film with a luminance uniformity of more than 95%, and the quantum dot film was attached to a luminous display with an insulation capacity of 500 V, an insulation resistance of 99.9 GΩ, and a luminance of 688.5 ㏅/㎠ at white region and 122.3 ㏅/㎠ at red region.
목차
1. 서론
2. 연구 방법
2.1 InP계 양자점 합성
2.2 양자점 필름 코팅
2.3 양자점 필름 발광형 표시장치
3. 실험 결과
3.1 InP계 양자점
3.2 양자점 필름 코팅
3.3 양자점 필름 발광형 표시장치
4. 결론
후기
References