초록
영어
This study aimed to grow single crystals with low dislocation density using a heat exchange method using room temperature water, and investigated the effect of the structure of the heat exchanger under the crucible on the defects and dislocation density of the single crystals and the shape of the solid-liquid interface of the crystals, and obtained the following conclusions. The dislocation density of sapphire single crystal grown at 2,200℃ for 30 min and a growth rate of 0.2℃/min was 0.92x103pcs/㎠. Mo guard was used to stabilize the solid-liquid interface grown from seeds, and sapphire single crystals with a diameter of 130㎜ and a height of 75㎜ were grown.
목차
1. 서론
2. 연구 방법
2.1 단결정 성장로 구성
2.2 사파이어 단결정 성장
3. 실험 결과
3.1 사파이어 단결정의 전위밀도
3.2 사파이어 단결정 잉곳
4. 결론
후기
References
저자정보
참고문헌
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