원문정보
초록
영어
Despite the presence of the p-Channel MOSFET inrush current limiter circuit within the power supply unit of military radar, The internal MOSFET and DC-DC Converter has been damaged due to the high inrush current. In this paper, the cause of the high inrush current was identified by analyzing the p-Channel MOSFET inrush current limiter circuit. Based on the analysis, the high inrush current was reduced by about 60% by adjusting the time constant of the source-to-gate elements compared to before improvement.
목차
ABSTRACT
1. 서론
2. 본론
2.1 MOSFET 개요
2.2 PMOS 돌입전류 제한 회로 분석
2.3 개선 및 검증
3. 결론
References
1. 서론
2. 본론
2.1 MOSFET 개요
2.2 PMOS 돌입전류 제한 회로 분석
2.3 개선 및 검증
3. 결론
References
키워드
저자정보
참고문헌
자료제공 : 네이버학술정보