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Poster Session Ⅰ: ICT-Future Vehicle

Triboelectric-based rotating gate transistors

원문정보

Hyunji Shin, Hang Chan Jo, Seul-Lee Lee, Dong-Jin Lee, Myeongjoo Son, Xue Zhang, Dae Yu Kim

한국차세대컴퓨팅학회 한국차세대컴퓨팅학회 학술대회 The 8th International Conference on Next Generation Computing 2022 2022.10 pp.222-223
피인용수 : 0건 (자료제공 : 네이버학술정보)

초록

영어

The rotating gate driving transistors based on the triboelectric mechanism has been developed. The fabricated device is switched on by triboelectricity without applying a gate voltage, and the output current increases as the gate rotation becomes faster or the friction layer becomes thicker.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENTAL PROCEDURE
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES

키워드

저자정보

  • Hyunji Shin dept. ICT-Future Vehicle Convergence Education & Research Center Inha University
  • Hang Chan Jo dept. Electrical and Computer Engineering Inha University
  • Seul-Lee Lee Center for Sensor Systems Inha University
  • Dong-Jin Lee Inha Research Institute for Aerospace Medicine Inha University
  • Myeongjoo Son Inha Research Institute for Aerospace Medicine Inha University
  • Xue Zhang coll. Ocean Science and Engineering Shandong University of Science and Technology Qingdao, China
  • Dae Yu Kim dept. Electrical and Computer Engineering Incheon, Republic of Korea

참고문헌

자료제공 : 네이버학술정보

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