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Poster Session Ⅰ: ICT-Future Vehicle

Analysis on Degradation of Ferroelectric Memory

원문정보

Sangwoo Kim, Jeonghan Kim, Soi Jeong, Kiryun Kwon, Changhyeon Han, Eunchan Park, Jiyong Yim, Been Kwak, Jiwon You, Daewoong Kwon

한국차세대컴퓨팅학회 한국차세대컴퓨팅학회 학술대회 The 8th International Conference on Next Generation Computing 2022 2022.10 pp.212-213
피인용수 : 0건 (자료제공 : 네이버학술정보)

초록

영어

Subthreshold swing degradation of ferroelectric-gate field effect transistor (FeFET) memory are analyzed through DC and fast drain current (ID)-gate voltage (VG) measurements. From the fast ID-VGs before endurance cycling, it is revealed that acceptor-like traps with millisecond-order response time mainly exist in the gate oxide of FeFETs and the traps cause the different subthreshold swing (SS) between erase and program states.

목차

Abstract
I. INTRODUCTION
II. RESULTS AND DISCUSSION
III. CONCLUSION
REFERENCES

키워드

저자정보

  • Sangwoo Kim Department of Electrical Engineering, Inha University
  • Jeonghan Kim Department of Electrical Engineering, Inha University
  • Soi Jeong Department of Electrical Engineering, Inha University
  • Kiryun Kwon Department of Electrical Engineering, Inha University
  • Changhyeon Han Department of Electrical Engineering, Inha University
  • Eunchan Park Department of Electrical Engineering, Inha University
  • Jiyong Yim Department of Electrical Engineering, Inha University
  • Been Kwak Department of Electrical Engineering, Inha University
  • Jiwon You Department of Electrical Engineering, Inha University
  • Daewoong Kwon Department of Electrical Engineering Inha University

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자료제공 : 네이버학술정보

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