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Review: Advancement of Integrated Passive Device Technology

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영어

In this paper, an advancement of integrated passive device (IPD) technology will be reviewed and its wide implementation will be investigated. This technology can be implemented to fabricate passive components like resister, inductor and capacitor to design and fabricate filters, combiners, dividers, baluns, and antenna etc. This is a kind of radio frequency (RF) solution in wireless technology and its main features are excellent device performance, higher integration, and higher reliability, and higher repeatability, device packaging and low cost. IPD can be fabricated using especially thin film and photolithography processing. The substrates can be used for this are silicon, GaAs, InGaP, alumina etc. and this technical is more beneficial to internet of things (IoT) which is an emerging technology.

목차

Abstract
 1. Introduction
 2. Thin film process technology
  2.1 Resister
  2.2 Capacitor
  2.3 Inductor
 3. Conclusion
 References

저자정보

  • Bhanu Shrestha Department of Electronic Engineering, Kwangwoon University

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