원문정보
보안공학연구지원센터(IJHIT)
International Journal of Hybrid Information Technology
Vol.9 No.1
2016.01
pp.141-152
피인용수 : 0건 (자료제공 : 네이버학술정보)
초록
영어
This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are validated, compared and showed good agreement with the measured data. The temperature dependent behavior is simulated and analyzed.
목차
Abstract
1. Introduction
2. Self-Heating in IGBT Transistor
3. IGBT Structure
3.1 Physics of IGBT
4. Results and Discussion
5. IGBT Control Circuit Design
5.1 Turn on
5.2 Turn off
6. Effect of Gate Resistance
7. Effect of Temperature
8. Conclusion
References
1. Introduction
2. Self-Heating in IGBT Transistor
3. IGBT Structure
3.1 Physics of IGBT
4. Results and Discussion
5. IGBT Control Circuit Design
5.1 Turn on
5.2 Turn off
6. Effect of Gate Resistance
7. Effect of Temperature
8. Conclusion
References
키워드
저자정보
참고문헌
자료제공 : 네이버학술정보