earticle

논문검색

A Novel Optimal 2-D Layout for Cache Memory at 45nm CMOS Technology

초록

영어

This paper presents a novel optimal 2-D layout using PN and PNN pattern during placement, we utilize the device merging, abutment and alignment technique to enhance the wire-length and area-efficiency. A placement objective is formulated balancing the symmetry for routing and the area efficiency. To the best of my knowledge, this is the first piece of work that can handle PN and PNN pattern for placement and using device merging, abutment and alignment technique simultaneously. Two cell (MTIP3&IP3) are used to demonstrate the effectiveness of approach. Moreover, the proposed method generates more area-efficient transistor placements than the conventional method. In experiment we applied PN and PNN pattern for placement of devices with the device merging and abutment technique to attain the results for MTIP3 and IP3 cell 6.5025umsq and 3.114umsq respectively. Result shows that the area of IP3 cell is improved by 50%.

목차

Abstract
 1. Introduction
 2. Review of Related Work
 3. Description of the Problem
 4. The Approach
  4.1 Placement Techniques
 5. Experimental Results
 6. Conclusion and Future Scope
 References

저자정보

  • Komal VLSI Design Group, ITM University, Gurgaon (Haryana) India
  • Mohit Saxena Cadence Design Systems, Noida (Uttar Pradesh) India
  • Shashank Chaturvedi Cadence Design Systems, Noida (Uttar Pradesh) India
  • Neeraj Kr. Shukla VLSI Design Group, ITM University, Gurgaon (Haryana) India

참고문헌

자료제공 : 네이버학술정보

    함께 이용한 논문

      ※ 원문제공기관과의 협약기간이 종료되어 열람이 제한될 수 있습니다.

      0개의 논문이 장바구니에 담겼습니다.