원문정보
초록
영어
Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped p++-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBRstructured porous smart particles. Optical characteristics of porous smart particles were measured by FT-IR spectroscopy. The surface morphology of porous smart particles was determined by FE-SEM.
목차
1. Introduction
2. Experimental Section
2.1. Preparation of DBR PSi
2.2. Surface Modification of Porous Silicon
2.3. Thermal Oxidation of Free-Standing DBR PSi Film
2.4. Preparation of DBR Smart Particles
2.5. Instruments and Data Acquisitions
3. Results and Discussion
3.1. DBR Porous Silicon
3.2. Surface Modification of DBR Si
3.3. Free-Standing DBR Si Film
3.4. DBR-structured Porous Smart Particles
4. Conclusions
References