earticle

영어

In this paper, a comparative study is done on performance of strained SiGe Heterojunction Bipolar Transistors (HBTs) with 100nm base width of conventional transistor. The device parameters like energy band gap variation, electron current density, electron drift velocity, electron and hole mobility are discussed. Here the current gain of strained SiGe layers was observed to increase by seven times as compared to bulk Si, because of the improvement in mobility in the trapezoid-base Si0.88Ge0.12 HBT. The strained SiGe HBT had 0.07 v lower turn on voltage than BJTs. The DC current gain of SiGe HBT can be improved further, by increasing Ge mole fraction. The simulation and parameter extraction have been done through the device simulator atlas module of SILVACO software.