원문정보
보안공학연구지원센터(IJHIT)
International Journal of Hybrid Information Technology
Vol.7 No.5
2014.09
pp.191-200
피인용수 : 0건 (자료제공 : 네이버학술정보)
초록
영어
The application of Static Random-Access Memory (SRAM), becomes more and more widely in aviation. However, the large amount of SRAM cells is very vulnerable to radiation included single-event upset (SEU). Based on the detection requirement of SRAM’s SEU, the detected circuit of the SEU on SRAM is designed. Then the method of redundancy check is used in the reinforcement of the SEU. The test results shows that the detection circuit can detect the SRAM-type storage chip sensitive bit of the single particle and the proposed method can improved the performance of anti-single particles of SRAM several times as high as 1E6.
목차
Abstract
1. Introduction
2. SEU Detection Circuit of SRAM
2.1. The Detection System Board of the SRAM’SEU
2.2. The Data Flow of Test System
3. The Design of the Logic Module Inside the FPGA
3.1. Serial Transmission and the Section of FIFO
3.2. CRC Checking Module
3.3. Dual Redundant Module
4. Analysis of Simulation Result
4.1. Simulation Test Results of SEU Fault Detection Circuit
4.2. Logic Analyzer Results of SEU Fault Detection Circuit
4.3. The Validation Result of the Method of CRC
4.4. The test of the Reinforcement Effect based on the Redundancy Check Method
5. Conclusion
Acknowledgements
References
1. Introduction
2. SEU Detection Circuit of SRAM
2.1. The Detection System Board of the SRAM’SEU
2.2. The Data Flow of Test System
3. The Design of the Logic Module Inside the FPGA
3.1. Serial Transmission and the Section of FIFO
3.2. CRC Checking Module
3.3. Dual Redundant Module
4. Analysis of Simulation Result
4.1. Simulation Test Results of SEU Fault Detection Circuit
4.2. Logic Analyzer Results of SEU Fault Detection Circuit
4.3. The Validation Result of the Method of CRC
4.4. The test of the Reinforcement Effect based on the Redundancy Check Method
5. Conclusion
Acknowledgements
References
저자정보
참고문헌
자료제공 : 네이버학술정보