원문정보
보안공학연구지원센터(IJSIP)
International Journal of Signal Processing, Image Processing and Pattern Recognition
Vol.7 No.3
2014.06
pp.247-256
피인용수 : 0건 (자료제공 : 네이버학술정보)
초록
영어
A computer simulation study based on Drift-Diffusion model has been carried out to explore and analyze the DC and high frequency properties of Zinc-Blende (β-phase) Gallium Nitride based p+pnn+ DDR IMPATT. The simulation study based on bias current optimization is performed at Ka-band window frequency of 35 GHz. The results portray the strong potentiality of β-GaN IMPATT as a powerful millimetre wave source with maximum conversion efficiency of 15% at an optimum bias current density of 3.2×109A/m2. The design results presented in the paper will be very helpful in realization of these diodes for millimetre wave communication systems.
목차
Abstract
1. Introduction
2. Simulation Methodologies
3. Results and Discussions
4. Proposed Methodology for Fabrication of GaN Impatt Diode
5. Conclusion
References
1. Introduction
2. Simulation Methodologies
3. Results and Discussions
4. Proposed Methodology for Fabrication of GaN Impatt Diode
5. Conclusion
References
키워드
저자정보
참고문헌
자료제공 : 네이버학술정보