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Research in Turn-on Delay of Semiconductor Lasers

초록

영어

This paper derived out a closed expression describing the time evolution of the carrier density within the turn-on period of a semiconductor laser, for the case that the Auger effect is considered with a term which is proportional to the cube of the carrier density. As a result, an explicit analytical expression for the turn-on delay of the diode laser has also been deduced.

목차

Abstract
 1. Introduction
 2. Study Backgrounds
 3. Calculations and Discussions
 5. Conclusions
 References

저자정보

  • Jialing Wang Basic Science College, Harbin University of Commerce, Harbin 150001 P. R. China
  • Ming Wang Basic Science College, Harbin University of Commerce, Harbin 150001 P. R. China
  • Jia Lv Basic Science College, Harbin University of Commerce, Harbin 150001 P. R. China
  • Shuai Huan Basic Science College, Harbin University of Commerce, Harbin 150001 P. R. China

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