원문정보
초록
영어
This paper presents the modeling and simulation of a low voltage pentacene organic field effect transistor (OFET), which is based on experimental data using an integrated finite element and artificial neural networks (ANN) approach. We present a model of organic field effect transistor based on neural network, this approach allows an easy way to model devices without acquiring a deep knowledge the device physics. The finite element type simulation is realized using 2-D Atlas simulator, both Atlas and obtained modeling results agree approximately with the published experimental results.
목차
Abstract
1. Introduction
2. Simulation
2.1. Finite element based Atlas simulation
2.2. Artificial Neural Networks
3. Conclusion
References
1. Introduction
2. Simulation
2.1. Finite element based Atlas simulation
2.2. Artificial Neural Networks
3. Conclusion
References
키워드
저자정보
참고문헌
자료제공 : 네이버학술정보
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- 10Structural Analysis on Organic Thin-Film Transistor With Device Simulation네이버 원문 이동
- 11IEEE International Electron Devices Meeting네이버 원문 이동
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