earticle

영어

This paper presents a new 60 GHz amplifier design method using TSMC 90 nm CMOS technology. The proposed design scheme is based on the way of the distributed amplifier design with open gate & open drain. The proposed architecture is analyzed and we define the upper limit to adopt proposed method in designing 60 GHz amplifier. To verify the effectiveness of the proposed scheme, the 60 GHz power amplifier with three cascade structure is designed and measured. Thanks to the proposed design structure, the fabricated power amplifier shows 29 dB peak gain, 25 dB gain over the 56~65 GHz, 11.5 dBm OP1dB, 13 dBm saturation power and peak 18.8 % PAE(Power Added Efficiency) under 2V supply voltage. Judging from the measurement results, the suggested architecture is a promising way for the future millimeter wave CMOS amplifier.