earticle

영어

We have grown MgB2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 oC by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB2 films on SiC/Hastelloy deposited at 500 and 600 oC. From the surface analysis, smaller and denser grains of MgB2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB2 tapes.