earticle

영어

We have studied Hall effect for potassium (K)-doped BaFe2As2 superconducting thin films by analyzing the relation between the longitudinal resistivity (Pxx) and the Hall resistivity (Pxy). The thin films used in this study were fabricated on Al2O3 (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~ 10-6 Torr. The samples showed the high superconducting transition temperatures (Tc) of ~ 40 K. The Pxx and the Pxx for K-doped BaFe2As2 thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm2 and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the Pxx and the Pxy to investigate Hall scaling behavior on the basis of the relation of Pxy = APxxβ. The β values are 3.0 ±0.2 in the c-axis-oriented K-doped BaFe2As2 thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.