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논문검색

Growth of Silicon Nanowire Arrays Based on Metal-Assisted Etching

원문정보

초록

영어

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized microelectrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

목차

Abstract
 1. Introduction
 2. Experimental Section
  2.1. Preparation of SiNWs
  2.2. Instrumentation and Data Acquisition
 3. Result and Discussion
 4. Conclusion
 Acknowledgment
 References

저자정보

  • Donghee Sihn 신동희. Department of Chemistry, Chosun University
  • Honglae Sohn 손홍래. Department of Chemistry, Chosun University

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