원문정보
피인용수 : 0건 (자료제공 : 네이버학술정보)
초록
영어
Changes of Fabry-Perot fringe patterns in porous silicon during etching process has been investigated. Four porous silicon samples were prepared with four different etch currents: (a) 10 mA/cm2, (b) 30 mA/cm2, (c) 50 mA/cm2, (d) 100 mA/cm2, respectively. Optical characterization of Fabry-Perot fringe pattern on porous silicon was achieved by Ocean optics 2000 spectrometer. The change of Fabry-Perot fringes was monitored and measured during the etching process. Fabry-Perot fringes pattern start to form after couple of minutes. As the etching time increased, more reflection peaks were observed. Its full width at half maximum (FWHM) decreased rapidly when the etching time increased.
목차
Abstract
1. Introduction
2. Experimental Section
2.1. Sample Preparation
2.2. Instrumentation and Data Acquisition
3. Result and Discussion
4. Conclusion
References
1. Introduction
2. Experimental Section
2.1. Sample Preparation
2.2. Instrumentation and Data Acquisition
3. Result and Discussion
4. Conclusion
References
저자정보
참고문헌
자료제공 : 네이버학술정보