원문정보
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초록
영어
A triple metal double gate (TM-DG) MOSFET with high-k dielectrics has been proposed to overcome the short channel effects. We are using top and bottom metal gates with different work functions to screen the effect of drain (DIBL effect). It has been found that this is effective in reducing the short channel effects. The metal gates have been used to remove the poly silicon depletion of conventional double gate (DG) MOSFET due to aggressive scaling to sub 100 nm regimes. It has been observed that use of metal gate with different workfunctions along with high-k dielectric improves the carrier transport in the channel.
목차
Abstract
1. Introduction
2. TM-DG MOSFET Structure
3. Results and Discussion
4. Conclusions
References
1. Introduction
2. TM-DG MOSFET Structure
3. Results and Discussion
4. Conclusions
References
저자정보
참고문헌
자료제공 : 네이버학술정보