원문정보
SC1 세척공정을 이용한 고품질 Poly(3,4-ethylenedioxythiophene) 전극 패턴 어레이의 개발
초록
영어
Application of self-assembled monolayers (SAMs) to the fabrication of organic thin film transistor has been recently reported very often since it can help to provide ohmic contact between films as well as to form simple and effective electrode pattern. Accordingly, quality of these ultra-thin films is becoming more imperative. In this study, in order to manufacture a high quality SAM pattern, a hydrophobic alkylsilane monolayer and a hydrophilic aminosilane monolayer were selectively coated on SiO2 surface through the consecutive procedures of a micro-contact printing (μCP) and dipcoating methods under extremely dry condition. On a SAM pattern cleaned with SC1 solution immediately after μCP, poly(3,4-ethylenedioxythiophene) (PEDOT) source and drain electrode array were very selectively and nicely vapour phase polymerized. On the other side, on a SC1-untreated SAM pattern, PEDOT array was very poorly polymerized. It strongly suggests that the SC1 cleaning process effectively removes unwanted contaminants on SAM pattern, thereby resulting in very selective growth of PEDOT electrode pattern.
목차
1. 서론
2. 실험
2.1. 자기조립단분자막 패턴의 제작
2.2 유기전극재료의 증착
3. 결과 및 고찰
4. 결론
감사의 글
참고문헌
