원문정보
초록
영어
Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of P++-type silicon wafer of resistivity between 0.1 mΩcm with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.
목차
1. Introduction
2. Experimental Section
2.1. Materials
2.2. Preparation of DBR PSi.
2.3. Instrumentation and Data Acquisition
2.4. Synthesis of Copper (II) Catalyst.
3. Result and Discussion
4. Conclusion
References