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영어

Oxidation behaviors of porous silicon were investigated by the measurement of area of SiO2 vibrational peaks in FTIR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 Ω/cm. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 mA/cm2 for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at 100oC, 200oC, 300oC, and 400oC, respectively. The growth rate of SiO2 layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.