원문정보
Photoluminescence of Porous Silicon According to Various Etching Times and Various Applied Current Densities
초록
영어
Photoluminescence properties and surface morphologies of porous silicon etched with various applied current densities at fixed etching times. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA exhibited very bright red photoluminescence properties. As the applied current densities increased, the photoluminescence efficiencies of porous silicon prepared at applied current densities above 300 mA decreased, and displayed the cracked surface on porous silicon. This crackεd surface start to collapsed to give cracked domains.
목차
1. 서론
2. 실험
2.1. 다공성표면을 만들기 위한 실험 준비
2.2. 데이터 수집
2.3. 광학측정기계
3. 결과 및 고찰
3.1. 다공상 실리콘의 표면 특성
4. 결론
참고문헌