earticle

영어

A stoichiometric mixture of evaporating materials for ZnIn2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, ZnIn2Se4 mixed crystal was deposited on thoroughly etched semiinsulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 630oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnIn2Se4 single crystal thin films measured from Hall effect by van der Pauw method are 9.41×1016 cm-3 and 292 cm2/v·s at 293 K, respectively. The temperature dependence of the energy band gap of the ZnIn2Se4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.8622 eV −(5.23×10-4 eV/K)T2/(T + 775.5 K).