원문정보
Solution-Processed Gate Insulator of Ethylene-Bridged Silsesquioxnae for Organic Field-Effect Transistor
초록
영어
Ethylene-bridged silsesquioxane resins were synthesized from two monomers: 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane. The silsesquioxane thin films were spin-coated from the copolymerized resins on silicon wafer. Metal insulator metal (MIM), metal insulator semiconductor (MIS) devices were utilized to investigate the electrical properties of the copolymerized thin films. As the films were inserted as gate insulator in the OTFT devices, the field effect mobilitites were evaluated by employing Poly(3-hexylthiophene) (P3HT) as organic semiconductor, which shows that their dielectric properties and mobility values are dependent on the molecular structures and Si-OH concentration involving in the films.
목차
1. 서론
2. 실험방법
2.1. 에틸렌-브리지드 실세스퀴옥산 고분자 레진 합성
2.2. 증류수 용매에서 에틸렌-브리지드 실세스퀴옥산 고분자 합성
2.3. 에틸렌-브리지드 실세스퀴옥산 박막제작
2.4. 박막 특성분석
2.5. 박막 트랜지스터 특성평가
3. 결과 및 고찰
3.1. FT-IR 분석 결과
3.2. AFM 측정결과
3.3. 접촉각 측정결과
3.5. MIM 특성
3.6. 박막의 유전적 특성 및 트랜지스터 특성
4. 결론
참고문헌