원문정보
Formation of Charged Exciton in GaAs-AlGaAs Double-Quantum-Well Structure at High Magnetic Field
초록
영어
The photoluminescence was measured in GaAs-AlGaAs double-quantum-well structure at high magnetic field. Although the phototransition characteristics displayed a free-particle transition at low magnetic field, the change of free-particle transition into bound-exciton transition was observed at high magnetic field (above 10 T). A charged exciton formation due to charge-unbalanced electron-hole was identified by using a spin-polarized photoluminescence method. An increase of exciton formation due to the localization of free-particle at magnetic field was observed according to the increase of magnetic field.
목차
1. 서론
2. 실험
3. 결과 및 고찰
4. 결론
참고문헌