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포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구

원문정보

Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist

김성훈, 김상태

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초록

영어

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

목차

Abstract
 1. 서론
 2. 반도체 산업 및 소재 산업
  2.1. 국내 반도체 재료 시장 전망
 3. 포토 리소그래피 기술
  3.1. 리소그래피 기술 동향
 4. 화학 증폭형 포토 레지스트의 광산 발생제(Photoacid generator)
  4.1. 광산 발생제(Photoacid generator)의 양에 따른 레지스트의 열적 변화
  4.2. 광산 발생제(Photoacid generator)의 양이온의 구조에 따른 프로파일 변화
  4.3. 광산 발생제(Photoacid generator)의 음이온의 구조에 따른 프로파일 변화
  4.4. 광산 발생제(Photoacid generator)의 산도에 따른 프로파일 및 해상도 변화
  4.5. 화학 증폭 레지스트(KrF 레지스트) 의 레진 구조적 역할
 5. 결론
 참고문헌

저자정보

  • 김성훈 Sung-Hoon Kim. 동우화인켐 전자재료연구소
  • 김상태 Sang-Tae Kim. 동우화인켐 전자재료연구소

참고문헌

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