원문정보
Intercorrelation between Photonic Band and Etch Current on Rugate Photonic Crystals
초록
영어
Multiple rugate structures can be etched on a silicon wafer and placed in the same physical location, showing that many sharp spectral lines can be obtained in the optical reflectivity spectrum. Porous silicon samples were prepared by electrochemical etch of heavily doped p-type silicon wafers. The etching solution consisted of a 3:1 volume mixture of aqueous 48% hydrofluoric acid and absolute ethanol. Galvanostatic etch was carried out in a Teflon cell by using a twoelectrode configuration with a Pt mesh counterelectrode. A sinusoidal current density waveform varying between 51.5 and 74.6 mA/cm2 is applied. The anodization current was supplied by a Keithley 2420 high-precision constant current source which is controlled by a computer to allow the formation of PSi multilayer.
목차
1. 서론
2. 실험
2.1. Rugate 다공성 실리콘의 합성
2.2. 측정기기
3. 결과 및 고찰
3.1. Rugate 다공성 실리콘 제작 원리
3.2. 센터 값 (Ai,center)의 변화에 따른 rugate 다공성 실리콘 reflcetivity의 변위
4. 결론
참고문헌