원문정보
초록
영어
Metal-semiconductor contact is very important for the operating property of semiconductor detector. Cd0.96Zn0.04Tesemiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron ProbeMicro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemicalcomposition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal.Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measuredwith the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detectorwith Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes lowwhen the crystal resistivity was high.
목차
1. INTRODUCTION
2. MATERIALS AND METHODS
3. RESULTS AND DISCUSSION
4. CONCLUSION
REFERENCES