earticle

영어

Recently, a successful outcome of solid device such as high integrated memory, optoelectronic device and biochip is in the development of nanosclae lithographic technique. In other words, nanoscale controlling is key point to improve these devices. Compare with electrical beam lithography, optics lithography, and NIL, Nanoimprint lithography (NIL) is most effective to make nanostructure because of its merits. NIL can provide inexpensive and easier method to generate large area of nanoscale patterns. Especially ultraviolet-nanoimprint lithography (UV-NIL) is
extensively used among nanoimprint lithography method because of efficiency in view of cost and time. By using this UV-NIL technique, we have successfully fabricated 100nm wide silicon nanowire patterns on the Silicon on insulator (SOI) wafer. The fabricated nanowire patterns were distinguished by FE-SEM and the characteristic of nanowire conductance were measured by semiconductor parameter analyzer. Consequently, these nanopatterned SOI substrates would be
able to use as bioplatform for nanoscale biochips. Acknowledgments: This research was supported by Nuclear R&D program through the Korea Science and Engineering Foundation (KOSEF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (Grant No. M20706010003-08M0601-00310), and by the Ministry of Knowledge Economy (MKE) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project
for Strategic Technology and by The Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (2006-05374)