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We report a method and experiment to detect the transport of the lattice phonon generated by hot electrons during the MOSFET operation. By measuring the gated-induced drain leakage (GIDL) current of the MOSFET as a phonon sensor and using a nearby MOSFET as a phonon generator operating in the hot carrier generating bias conditions, we are able to detect the transport of the phonons in the chip. In order to validate the idea, we performed experiments with the 5-transistors scheme, which consists of the 1-phonon sensor and the 4-phonon generators. We measure the increment of the GIDL current which is caused by an arrival of the phonons transported from the phonon generator by using the lock-in technique in the scheme. From the variation of the GIDL current in different distances and the gate bias conditions, we estimate the equivalent lattice temperature on the assumption of the system in near-equilibrium. Moreover, we explain the fundamental principle that the GIDL current can estimate the phonon energy even in non-equilibrium. Additionally, we report that our method can be used to estimate the number of the major phonons generated in the strained silicon technology.
