초록 열기/닫기 버튼
TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connectingtechnique between front and back of Si die by filling with conductive metal. This technology allows that athree-dimensionally connected Si die can make without a large number of wire-bonding. These TSVtechnologies require various engineering skills such as forming a via hole, forming a functional thin film,filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addressesthe TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current densityon electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material inwhole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. Thisstudy about semiconductor packaging will be able to contribute to the commercialization of 3D TSVtechnology.
