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Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a selfassembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by a dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA was 5.43 eV. The surface energy and a transmittance were unchanged within an error range. In this study, therefore, the possibility of ohmic contact is demonstrated in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of an OTFT.
Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a selfassembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by a dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA was 5.43 eV. The surface energy and a transmittance were unchanged within an error range. In this study, therefore, the possibility of ohmic contact is demonstrated in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of an OTFT.
