초록 열기/닫기 버튼
Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery ofpure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significantamounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectivelyto maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metalliccomposition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were testedto comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. Themost effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phasetransformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequentlyhigh purity Ga and In can be recovered by series of hydro processes.
